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| EIM0618-1.5 UPDATED 10/21/2005 6.0 - 18.0 GHz 1.5-Watt Power Module FEATURES * * * * * 6.0 - 18.0 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +32.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G VSWR PAE Id1dB PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 6.0-18.0GHz VDS = 8 V, IDQ 480mA Gain at 1dB Compression f = 6.0-18.0GHz VDS = 8 V, IDQ 480mA Gain Flatness f = 6.0-18.0GHz VDS = 8 V, IDQ 480mA Input/Output VSWR f = 6.0-18.0GHz Power Added Efficiency at 1dB Compression VDS = 8 V, IDQ 480mA f = 6.0-18.0 GHz Drain Current at 1dB Compression f = 6.0-18.0 GHz MIN 31.0 5.0 TYP 32.0 6.0 1.0 1.5:1 25 600 750 2.0:1 % mA MAX UNITS dBm dB dB Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised October 2005 EIM0618-1.5 UPDATED 10/21/2005 6.0 - 18.0 GHz 1.5-Watt Power Module CHARACTERISTIC ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG ABSOLUTE1 12 V -8 V IDSS 160 mA 31 dBm 9.0 W 175C -65/+175C CONTINUOUS2 8V -3 V 950 mA 28 mA @ 3dB compression 7.6 W 150C -65/+150C Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Typical Power Data (VDS = 8 V, IDSQ = 480 mA) 34 33 32 P-1dB (dBm) P-1dB & G-1dB vs Frequency 12 11 10 9 G-1dB (dB) 31 30 29 28 27 6.0 8.0 10.0 12.0 14.0 16.0 Frequency (GHz) P-1dB (dBm) G-1dB (dB) 8 7 6 5 18.0 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised October 2005 |
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